Optimization of bridged-grain polysilicon thin-film transistor (BG-TFT)

Pages: 231 - 234
Published: May 12, 2014
Abstract
Polycrystalline silicon thin-film transistors (p-TFTs) can significantly be improved in terms of their performance with the bridged grain structure (BG TFTs) by forming lines with higher doping concentration (5×10 15 -10 16 null cm -3 ) across the active channel, equally spaced at a distance close to the average grain...
Paper Details
Title
Optimization of bridged-grain polysilicon thin-film transistor (BG-TFT)
Published Date
May 12, 2014
Journal
Pages
231 - 234
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