Surface chemistry, reactivity, and pore structure of porous silicon oxidized by various methods

Published on Jul 17, 2012in Langmuir3.683
· DOI :10.1021/la301642w
Joakim Riikonen19
Estimated H-index: 19
Mikko Salomäki14
Estimated H-index: 14
+ 7 AuthorsVesa-Pekka Lehto35
Estimated H-index: 35
Oxidation is the most commonly used method of passivating porous silicon (PSi) surfaces against unwanted reactions with guest molecules and temporal changes during storage or use. In the present study, several oxidation methods were compared in order to find optimal methods able to generate inert surfaces free of reactive hydrides but would cause minimal changes in the pore structure of PSi. The studied methods included thermal oxidations, liquid-phase oxidations, annealings, and their combinations. The surface-oxidized samples were studied by Fourier transform infrared spectroscopy, isothermal titration microcalorimetry, nitrogen sorption, ellipsometry, X-ray diffraction, electron paramagnetic resonance spectroscopy, and scanning electron microscopy imaging. Treatment at high temperature was found to have two advantages. First, it enables the generation of surfaces free of hydrides, which is not possible at low temperatures in a liquid or a gas phase. Second, it allows the silicon framework to partially ...
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