Electronic properties of semiconductor nanostructures probed by scanning tunneling microscopy
Abstract
We demonstrate the novel application of the scanning tunneling microscope to find and probe the electronic transport properties of single semiconductor nanostructures at temperatures from room temperature to as low as 1.5 K. The current-voltage characteristics of InGaAs/InAlAs resonant tunneling nanostructures clearly show negative differential resistance. From the dependence of the current on cross-sectional area the lateral depletion is...
Paper Details
Title
Electronic properties of semiconductor nanostructures probed by scanning tunneling microscopy
Published Date
May 27, 1991
Journal
Volume
58
Issue
21
Pages
2402 - 2404
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