GaAs p-n junction formed in quantum wire crystals
Abstract
A p-n junction is formed for the first time in a cross-sectional area of a GaAs wire crystal with a diameter of about 100 nm. Ultrafine cylindrical growth by metalorganic vapor phase epitaxy is employed for the fabrication. Current-voltage and capacitance-voltage characteristics confirm the formation of the p-n junction in a narrow area at the midpoint of a wire crystal. Intensive light emission by current injection is observed at 77 K and even...
Paper Details
Title
GaAs p-n junction formed in quantum wire crystals
Published Date
Feb 10, 1992
Journal
Volume
60
Issue
6
Pages
745 - 747
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