Advanced process modules and architectures for half-terahertz SiGe:C HBTs
Pages: 9 - 16
Published: Nov 6, 2009
Abstract
The European project DOTFIVE [1] addresses evolutionary scaling of self-aligned selective epitaxial base SiGe:C HBTs, investigates novel SiGe:C HBT architectures, and develops novel process modules to push SiGe BiCMOS towards 500 GHz F max null and 2.5 ps gate delay. In this paper, scaling issues of SiGe:C HBT technology will be addressed. The limitations of the different commonly used architectures will be described, and measures taken in the...
Paper Details
Title
Advanced process modules and architectures for half-terahertz SiGe:C HBTs
Published Date
Nov 6, 2009
Pages
9 - 16
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