A 60 GHz tunable LNA in 32 nm double gate MOSFET for a wireless NoC architecture

Published: Apr 1, 2013
Abstract
The performance, tunability and efficiency of double gate MOSFET (DG-MOSFET) low noise amplifier (LNA) is investigated. We propose a novel two-stage common source cascode LNA and study its gain switching properties via back gate tuning in 32 nm DG-MOSFETs that leads to variable and reconfigurable device performances not found in comparable amplifiers built with conventional CMOS architectures without additional hardware. The peak gain changes by...
Paper Details
Title
A 60 GHz tunable LNA in 32 nm double gate MOSFET for a wireless NoC architecture
Published Date
Apr 1, 2013
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