Charge Noise in Graphene Transistors
Abstract
We report an experimental study of 1/f noise in liquid-gated graphene transistors. We show that the gate dependence of the noise is well described by a charge-noise model, whereas Hooge's empirical relation fails to describe the data. At low carrier density, the noise can be attributed to fluctuating charges in close proximity to the graphene, while at high carrier density it is consistent with noise due to scattering in the channel. The charge...
Paper Details
Title
Charge Noise in Graphene Transistors
Published Date
Apr 7, 2010
Journal
Volume
10
Issue
5
Pages
1563 - 1567
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