Improvement of poly-silicon hole induced gate oxide failure by silicon rich oxidation

This paper depicts the improvement of poly-silicon (poly-Si) holes induced failures during gate oxide integrity (GOI) voltage-ramp (V-Ramp) tests by replacing plasma enhanced oxidation with silicon rich oxidation (SRO), which is cap oxide on transfer gate serving as a hard mask to selectively form salicide. The SRO was found to be capable of completely removing salicide block etching induced poly-Si holes. With this SRO film deposited on...