Original paper
Atomically ThinMoS 2 : A New Direct-Gap Semiconductor
Abstract
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,\dots{},6S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk...
Paper Details
Title
Atomically ThinMoS 2 : A New Direct-Gap Semiconductor
Published Date
Sep 24, 2010
Journal
Volume
105
Issue
13
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