This website uses cookies.
We use cookies to improve your online experience. By continuing to use our website we assume you agree to the placement of these cookies.
To learn more, you can find in our Privacy Policy.
Original paper

Atomically ThinMoS2: A New Direct-Gap Semiconductor

Volume: 105, Issue: 13
Published: Sep 24, 2010
Abstract
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,\dots{},6S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk...
Paper Details
Title
Atomically ThinMoS2: A New Direct-Gap Semiconductor
Published Date
Sep 24, 2010
Volume
105
Issue
13
TrendsPro
  • Scinapse’s Citation Trends graph enables the impact assessment of papers in adjacent fields.
  • Assess paper quality within the same journal or volume, irrespective of the year or field, and track the changes in the attention a paper received over time.
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.
© 2025 Pluto Labs All rights reserved.
Step 1. Scroll down for details & analytics related to the paper.
Discover a range of citation analytics, paper references, a list of cited papers, and more.