Amorphous solid

Transmission electron microscopy

Metallurgy

Materials science

Chromatography

Indium

Computer science

Semiconductor

Substrate (aquarium)

Band gap

Geology

Ternary operation

Oceanography

Physical chemistry

Nanotechnology

Crystallite

Direct and indirect band gaps

Thin film

Solar cell

Composite material

Analytical Chemistry (journal)

Chalcogenide

Crystallography

Chemistry

Programming language

Scanning electron microscope

Electrode

Photoelectrochemical cell

Electrolyte

Optoelectronics

Indium tin oxide

Molybdenum

Electrochimica Acta

Thin films of molybdenum sulphoselenide, MoSxSe2−x, (0 ≤ x ≤ 2) have been electrosynthesized on indium-tin-oxide (ITO)-coated glass and stainless steel substrates. The films were characterized for their structural, morphological and compositional characteristics. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC)/solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals the films were adherent to the substrate with uniform in nature which also confirmed by Transmission electron microscope (TEM). Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Mo, S and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott–Schottky plots indicates that the films obtained are of n-type material. For all films, the semiconductor parameter values come in the better range of other transition metal chalcogenides which has proven that MoSSe thin films are capable as solar/PEC cell materials.

A study on molybdenum sulphoselenide (MoS Se2−, 0 ≤x≤ 2) thin films: Growth from solution and its properties