Selective epitaxy of MOVPE GaAs using diethyl gallium chloride

Selective epitaxy is the laterally controlled growth of epitaxial material on a substrate. We have demonstrated the highly selective epitaxial growth of GaAs using diethyl gallium chloride or (C2H5)2GaCl. No GaAs growth is observed on the masking material over a wide range of growth temperatures, 600 ⩽T ⩽800°C. The edges of the selectively grown GaAs are bounded by the slow growth planes typical of the inorganic based growth techniques. By...