Parameters for i n s i t u growth of high T c superconducting thin films using an oxygen plasma source

Superconducting thin films of Dy-Ba-Cu-O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the oxygen incorporation. This allows growth on a relatively low-temperature substrate kept below 600 °C followed by an in situ anneal below 400 °C. Thin films of Dy-Ba-Cu-O which were fully superconducting at 40 K have been fabricated by this in situ...