Effect of Hexagonal Boron Nitride on Energy Band Gap of Graphene Antidot Structures

The zero band gap (E g ) graphene becomes narrow E g null semiconductor when graphene is patterned with periodic array of hexagonal shaped antidots, the resultant is the hexagonal Graphene Antidot Lattice (hGAL). Based on the number of atomic chains between antidots, hGALs can be even and odd. The even hGALs (ehGAL) are narrow E g null semiconductors and odd hGALs (ohGAL) are semi-metals. The E g null opening up by hGALs is not sufficient to...