Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5
Abstract
The chemical and structural effects of processing on the crystallization of nitrogen doped Ge2Sb2Te5 is examined via x-ray photoelectron spectroscopy (XPS), x-ray absorption spectroscopy (XAS), time resolved laser reflectivity, and time resolved x-ray diffraction (XRD). Time resolved laser reflectivity and XRD show that exposure to various etch and ash chemistries significantly reduces the crystallization speed while the transition temperature...
Paper Details
Title
Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5
Published Date
Feb 1, 2011
Journal
Volume
109
Issue
3
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