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arXiv: Applied Physics
Papers 1802
1 page of 181 pages (1,802 results)
H. Mohammed , S. Al Risi + -3 AuthorsRachid Sbiaa18
Estimated H-index: 18
(Sultan Qaboos University)
The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of domain wall positions and their motion using spin-transfer torque are important challenges. In this paper, we demonstrate controlled domain wall motion using spin-transfer torque in staggered magnetic nanowires. The devices, fabricated using electron-beam lith...
Athith Krishna (UCSB: University of California, Santa Barbara), Aditya Raj + -3 AuthorsUmesh K. Mishra86
Estimated H-index: 86
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the first p-type field effect transistor (pFET) based on an AlGaN/GaN superlattice (SL), grown using MOCVD. Magnesium was used as the p-type dopant. A sheet resistance of 11.6 k{\Omega}/sq, and a contact resistance of 14.9{\Omega}.mm was determined using transmission line measurements (TLM) for a Mg doping of 1.5e19cm^-3 of ...
Ryo Matsumoto5
Estimated H-index: 5
Shintaro Adachi2
Estimated H-index: 2
+ -3 AuthorsYoshihiko Takano37
Estimated H-index: 37
A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at temperature of 7 K. The line pattern exhibited a signature of higher onset temperature above 10...
Okan Yurduseven13
Estimated H-index: 13
Michael Elsdon4
Estimated H-index: 4
In this paper, a review of indirect microwave holography for through-wall imaging is presented. Indirect microwave holography is an imaging technique, enabling the complex object scattered fields (amplitude and phase) to be mathematically recovered from intensity-only, scalar microwave measurements. By removing the requirement to use vector measurement equipment to directly measure the complex fields, indirect microwave holography significantly reduces the cost of the imaging system and simplifi...
Paul Stanfield , Andrew J. Leenheer8
Estimated H-index: 8
+ -3 AuthorsMatt Eichenfield9
Estimated H-index: 9
(SNL: Sandia National Laboratories)
We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic temperatures. As an example of the potential of the platform, we demonstrate a c...
Zhe Cheng5
Estimated H-index: 5
Virginia D. Wheeler14
Estimated H-index: 14
+ -3 AuthorsSamuel Graham46
Estimated H-index: 46
(Georgia Institute of Technology)
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower than that of other wide bandgap semiconductors, which will impact its ability to be used in high power density applications. Thermal management in Ga2O3 electronics will be the key for device reliability, especially for high power and high frequency de...
Qunshuo Wei2
Estimated H-index: 2
Basudeb Sain5
Estimated H-index: 5
+ -3 AuthorsThomas Zentgraf36
Estimated H-index: 36
Metasurfaces possess the outstanding ability to tailor phase, amplitude and even spectral responses of light with an unprecedented ultrahigh resolution, thus have attracted significant interests. Here, we propose and experimentally demonstrate a novel meta-device that integrates color printing and computer-generated holograms within a single-layer dielectric metasurface by modulating spectral and spatial responses at subwavelength scale, simultaneously. In our design, such metasurface appears as...
Tuan T. Tran2
Estimated H-index: 2
(Uppsala University),
Quentin Hudspeth1
Estimated H-index: 1
+ -3 AuthorsJames Williams48
Estimated H-index: 48
Ge-Sn alloys with a sufficiently high concentration of Sn is a direct bandgap group IV material. Recently, ion implantation followed by pulsed laser melting has been shown to be a promising method to realize this material due to its high reproducibility and precursor-free process. A Ge-Sn alloy with ~9 at.% Sn was shown to be feasible by this technique. However, the compressive strain, inherently occurring in heterogeneous epitaxy of the film, evidently delays the material from the direct bandga...
Paulo F. Jarschel , Jin H. Kim2
Estimated H-index: 2
+ -3 AuthorsJimmy Xu37
Estimated H-index: 37
We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and long-term plasticities as well as a convenient non-linear response, making this structure attractive for neuromorphic computing applications. For further insights into this prospect, we predict typical behaviors relevant to the field, obtained by an extrapolation of...
Hamidreza Kazemi1
Estimated H-index: 1
Mohamed Y. Nada1
Estimated H-index: 1
+ -3 AuthorsFilippo Capolino34
Estimated H-index: 34
We present the first experimental demonstration of the occurrence of exceptional points of degeneracy (EPDs) in a single resonator system by introducing a linear time-periodic variation to one of its components, in contrast to parity time (PT)-symmetric systems that require two coupled resonators with precise values of gain to realize an EPD. In the proposed scheme, only the tuning of the modulation frequency is required that is easily achieved in electronic systems. The EPD is a point in a syst...