Yukang Feng
University of Virginia
Publications 5
#1Yukang Feng (UVA: University of Virginia)H-Index: 2
#2Matthew T. Dejarld (NRL: United States Naval Research Laboratory)H-Index: 1
Last.N. Scott Barker (UVA: University of Virginia)H-Index: 11
view all 8 authors...
In this paper, millimeter-wave detection is conducted for the first time on the basis of graphene photo- thermoelectric effect. Upon receiving millimeter- wave radiation, graphene generates hot carriers which diffuse towards the nearby drain and source contact metals, and causing a differential drain -source voltage. To optimize detection performance, devices with different drain and source contact metals as well as graphene geometries are designed and tested. Measured results show that using Yb...
#1Di Lu (University of Electronic Science and Technology of China)H-Index: 4
#2Xiaohong Tang (University of Electronic Science and Technology of China)H-Index: 12
Last.Yukang Feng (UVA: University of Virginia)H-Index: 2
view all 4 authors...
This paper presents a new kind of highly flexible frequency-agile bandpass filters (FA-BPFs) based on the novel synchronously tuned dual-mode resonator (STDR). The bandwidth (BW), BW variation tendency, passband selectivity (stopband rejection level), and frequency tuning range of the filter can be predefined individually. Benefiting from the unique characteristics of the STDR, the FA-BPF with very simple and highly flexible design/control procedures is achieved. Due to the proposed geometry, tw...
5 CitationsSource
Oct 1, 2017 in EuMIC (European Microwave Integrated Circuits Conference)
#1Jesse Moody (UVA: University of Virginia)H-Index: 4
#2Pouyan Bassirian (UVA: University of Virginia)H-Index: 4
Last.Steven M. Bowers (UVA: University of Virginia)H-Index: 7
view all 9 authors...
This work presents an ultra-low power event driven wake-up receiver (WuRx) fabricated in a RF CMOS 130 nm process. The receiver consists of an off-chip lumped element matching network, an envelope detector, a decision circuit capable of detecting sub-mV baseband signal voltages and a clock source consuming 1.3 nW. This receiver has demonstrated a sensitivity of −72 dBm while consuming a total of 8.3 nW from 1 V and 0.65 V sources.
5 CitationsSource
Jun 1, 2017 in IMS (International Microwave Symposium)
#1Yukang Feng (UVA: University of Virginia)H-Index: 2
#2N. Scott Barker (UVA: University of Virginia)H-Index: 11
In this work, a 500–750 GHz (WM-380) RF micro-electromechanical DC contact switch is realized and reported. This switch is integrated with a 50-Ω coplanar waveguide. The structure is fabricated on high resistivity silicon with top isolation silicon dioxide layer of 100 nm. The switch is electrostatically actuated with a threshold voltage of 60 V. The switch design and calibration are discussed. On-wafer measurements demonstrate that the insertion loss to be 0.7–2.7 dB in “ON” state with return l...
1 CitationsSource
Apr 1, 2016 in WAMICON (Wireless and Microwave Technology Conference)
#1Yukang Feng (UVA: University of Virginia)H-Index: 2
#2N. Scott Barker (UVA: University of Virginia)H-Index: 11
This work presents the design, simulation, and fabrication of a 500–750 GHz RF MEMS switch. The switch is designed on a high-resistivity silicon substrate using CPW. Electrostatic force generated by DC bias can actuate the beam to realize conduction or isolation between input and output CPW. HFSS simulations demonstrate that the switch's isolation is 14 dB at 620 GHz and 12 dB at 750 GHz in the OFF state. In the ON state, the insertion loss is approximately 2.5 dB, and at 750 GHz it drops to aro...
2 CitationsSource