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Sanggeun Jeon
Korea University
63Publications
13H-index
579Citations
Publications 63
Newest
#1D. Kim (KU: Korea University)H-Index: 3
#2Sanggeun Jeon (KU: Korea University)H-Index: 13
This paper presents a 300-GHz voltage-controlled oscillator (VCO) with a wide frequency tuning range and high output power. To generate fundamental oscillation at 300 GHz, a cascode cross-coupled pair is employed as a VCO core instead of a conventional common-emitter pair. Capacitive emitter degeneration is added to the VCO core to achieve a wide bandwidth of a negative conductance. In addition, the phase of the oscillation feedback loop is analyzed and optimized to further extend the tuning ran...
Jun 1, 2019 in IMS (International Microwave Symposium)
#1Iljin Lee (KU: Korea University)H-Index: 3
#2Young Hwan Kim (KU: Korea University)H-Index: 7
Last.Sanggeun Jeon (KU: Korea University)H-Index: 13
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This paper presents a WR-3 band distributed frequency doubler implemented in a 250-nm InP HBT technology. Three doubler unit cells are combined together with input and output transmission lines in a distributed way to achieve a wide bandwidth. A differential quasi-cascode pair is proposed for each unit cell design, which enables bandwidth extension and chip-size reduction. The distributed doubler exhibits measured peak power and conversion gain of 2.2 dBm and -6.5 dB, respectively, at 276 GHz. T...
#2Kwangwon ParkH-Index: 9
Last.Sanggeun JeonH-Index: 13
view all 7 authors...
This paper presents a CMOS W-band amplifier adopting a novel neutralization technique for high gain and stability. The W-band amplifier consists of four common-source differential gain cells that are neutralized by a cross-coupled MOS–varactor pair. Contrary to conventional neutralizations, the proposed technique enables tunable neutralization, so that the gate-to-drain capacitance of transistors is accurately tracked and neutralized as the varactor voltage is adjusted. This makes the neutraliza...
May 1, 2019 in ISCAS (International Symposium on Circuits and Systems)
#1Sanggeun Jeon (KU: Korea University)H-Index: 13
#2Jae-Sung Rieh (KU: Korea University)H-Index: 26
Last.Moonil Kim (KU: Korea University)H-Index: 14
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This paper presents a review of WR-3 band monolithic integrated circuits developed in an InP HBT technology. Envisioning potential applications of terahertz such as short-distance communication, imaging or spectroscopy, various circuit blocks are presented, including power amplifiers, oscillators, mixers, phase shifter, and switch. The design guideline and measurement result of each circuit are provided. Finally, WR-3 band heterodyne transmitter and receiver chips are introduced.
#1Kwangwon Park (KU: Korea University)
#2Hyunkyu Lee (KU: Korea University)H-Index: 3
Last.Sanggeun Jeon (KU: Korea University)H-Index: 13
view all 5 authors...
#1Bohee Suh (Samsung)
#2Hyunkyu Lee (KU: Korea University)H-Index: 3
Last.Sanggeun Jeon (KU: Korea University)H-Index: 13
view all 4 authors...
A D-band on–off keying (OOK) transceiver chipset is fabricated in a 65-nm bulk CMOS technology as a low-cost and highly integrative solution to short-distance wireless connectivity. Supplementary transistor modeling is performed for accurate circuit design at mm-wave frequencies. To overcome low transistor \text{f}_{\mathrm {max}}and reduce dc power consumption, the transmitter employs a frequency-multiplier-based architecture with no power amplifier. The receiver adopts a non-coherent archit...
#1Junho Ko (KU: Korea University)H-Index: 1
#2D. Kim (KU: Korea University)H-Index: 3
Last.Sanggeun Jeon (KU: Korea University)H-Index: 13
view all 3 authors...
This paper presents two D-band amplifiers fabricated in a 0.18- \mu\text{m}SiGe heterojunction bipolar transistor process. A single-ended amplifier employs a five-stage common-base topology, and a differential amplifier combines two of the single-ended chains. To overcome the limited available gain of the given technology at D-band, a gain-boosting technique based on positive feedback is adopted for each gain cell. In addition, the input and output impedances of the gain cell are conjugate-ma...
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