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Sanggeun Jeon
Korea University
Electrical engineeringAmplifierElectronic engineeringMathematicsBandwidth (signal processing)
70Publications
14H-index
636Citations
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Publications 70
Newest
#1Iljin Lee (KU: Korea University)H-Index: 3
#2Sanggeun Jeon (KU: Korea University)H-Index: 14
This letter presents a WR-1.5 frequency doubler implemented in a 130-nm InP heterojunction-bipolar-transistor (HBT) technology. The doubler core uses a differential common-emitter transistor to improve the stability and to ease the fundamental suppression. The output power is maximized by the source-pull and load-pull simulation. The input and output matching to the optimum impedance is implemented using a single transmission line. This simple matching structure reduces the modeling inaccuracy a...
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#1D. Kim (KU: Korea University)H-Index: 3
#2Sanggeun Jeon (KU: Korea University)H-Index: 14
This letter presents a 300-GHz voltage-controlled oscillator (VCO) with high output power and efficiency. The VCO core employs a differential Colpitts topology with inductive degeneration to facilitate a fundamental oscillation at 300 GHz. A common-base output buffer regulates the output power to minimize the power variation during the frequency tuning. The 300-GHz VCO is fabricated in a 130-nm InP double heterojunction bipolar transistor (DHBT) technology. The VCO exhibits a measured frequency ...
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#1Young Hwan Kim (KU: Korea University)H-Index: 9
#1Young-Hwan KimH-Index: 18
Last. Sanggeun Jeon (KU: Korea University)H-Index: 14
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This Letter presents a single-pole single-throw (SPST) switch for high-power applications in the mm-wave frequency band. A stacked-FET structure is adopted in the shunt switching cell for reducing the insertion loss and improving the linearity of the switch. To enhance the isolation, the parasitic inductance of the stacked-FET structure is resonated out by connecting a series capacitor. The number of stacked FETs in each shunt cell and the number of the shunt cells are optimised considering the ...
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#1Iljin Lee (KU: Korea University)H-Index: 3
#2Young Hwan Kim (KU: Korea University)H-Index: 9
Last. Sanggeun Jeon (KU: Korea University)H-Index: 14
view all 3 authors...
An analysis and design of distributed frequency doublers is presented at millimeter-wave (mm-wave) frequencies, including the D-, G-, and H-bands. The phase condition required for coherent output summation in the distributed multipliers is analyzed to maximize the output power and bandwidth. Based on the analysis, two mm-wave distributed frequency doublers are designed and experimentally demonstrated. The first doubler combines three unit cells in a distributed manner, while the insertion phase ...
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#1Kwangwon Park (KU: Korea University)
#1Kwangwon ParkH-Index: 10
Last. Sanggeun Jeon (KU: Korea University)H-Index: 14
view all 4 authors...
This letter presents an injection-locked frequency octupler (ILFO) fabricated using a 100-nm GaAs pHEMT. A frequency quadrupler, followed by an injection-locked push–push oscillator, is employed to achieve a high multiplication factor of eight with a simple structure. Compared to conventional amplifier-multiplier chains, the proposed structure is advantageous for dc power and chip area consumption, phase noise, and circuit stability. The high multiplication factor allows the use of a low-frequen...
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#1D. Kim (KU: Korea University)H-Index: 3
#2Sanggeun Jeon (KU: Korea University)H-Index: 14
This paper presents a 300-GHz voltage-controlled oscillator (VCO) with a wide frequency tuning range and high output power. To generate fundamental oscillation at 300 GHz, a cascode cross-coupled pair is employed as a VCO core instead of a conventional common-emitter pair. Capacitive emitter degeneration is added to the VCO core to achieve a wide bandwidth of a negative conductance. In addition, the phase of the oscillation feedback loop is analyzed and optimized to further extend the tuning ran...
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Jun 1, 2019 in IMS (International Microwave Symposium)
#1Iljin Lee (KU: Korea University)H-Index: 3
#2Young Hwan Kim (KU: Korea University)H-Index: 9
Last. Sanggeun Jeon (KU: Korea University)H-Index: 14
view all 3 authors...
This paper presents a WR-3 band distributed frequency doubler implemented in a 250-nm InP HBT technology. Three doubler unit cells are combined together with input and output transmission lines in a distributed way to achieve a wide bandwidth. A differential quasi-cascode pair is proposed for each unit cell design, which enables bandwidth extension and chip-size reduction. The distributed doubler exhibits measured peak power and conversion gain of 2.2 dBm and -6.5 dB, respectively, at 276 GHz. T...
1 CitationsSource
#2Kwangwon ParkH-Index: 10
Last. Sanggeun JeonH-Index: 14
view all 7 authors...
This paper presents a CMOS W-band amplifier adopting a novel neutralization technique for high gain and stability. The W-band amplifier consists of four common-source differential gain cells that are neutralized by a cross-coupled MOS–varactor pair. Contrary to conventional neutralizations, the proposed technique enables tunable neutralization, so that the gate-to-drain capacitance of transistors is accurately tracked and neutralized as the varactor voltage is adjusted. This makes the neutraliza...
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