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Matthew F. Bauwens
University of Virginia
34Publications
7H-index
148Citations
Publications 32
Newest
#1Souheil Nadri (UVA: University of Virginia)H-Index: 3
#2Linli Xie (UVA: University of Virginia)H-Index: 4
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 6 authors...
This letter reports on a method for extracting parasitic equivalent-circuit model parameters at submillimeter-wave frequencies. The devices investigated are quasi-vertical gallium arsenide Schottky diodes integrated on silicon. The technique utilizes measurements of coplanar waveguide-fed passive structures in the WR-2.2 band (325–500 GHz), which are fabricated on the same wafer as the diodes. These structures consist of short- and open-circuited terminations that allow direct measurement of the...
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Jun 1, 2019 in IMS (International Microwave Symposium)
#1Chunhu Zhang (UVA: University of Virginia)H-Index: 7
#2Matthew F. BauwensH-Index: 7
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 7 authors...
This paper demonstrates the first differential on-wafer probe with integrated balun operating in the WR-3.4 (220 – 330 GHz) waveguide band. The probe employs integrated balun circuitry to convert the single-ended signal from the waveguide output of a VNA into differential stimuli at the on-wafer transmission line output. The design approach, fabrication method, and measured results are described in this paper.
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#1Linli Xie (UVA: University of Virginia)H-Index: 4
#2Matthew F. BauwensH-Index: 7
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 8 authors...
An approach for one port on-wafer electronic calibration at submillimeter wavelengths is described. Quasivertical GaAs Schottky diodes integrated onto silicon serve as the electronic calibration standard. The S-parameters of the diode standards are characterized over the WM-570 (325—500 GHz) band as a function of bias and subsequently used as the standard for one-port calibration. Comparisons of the error coefficients derived using the diode standard are shown to be in good agreement with those ...
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Jun 1, 2018 in IMS (International Microwave Symposium)
#1Pawel KopytH-Index: 9
#2Bartlomiej SalskiH-Index: 10
Last.N. S. Barker (UVA: University of Virginia)H-Index: 17
view all 7 authors...
This article describes a novel approach to measure responsivity of a FET-based sub-THz detector using on-wafer probes to directly feed a bare antenna-less detecting device. Thus, the approach eliminates the need to know beforehand the detector's effective aperture, which can be a source of large variation between responsivity measurements of various FET-based detectors often cited in the literature. It seems that the presented method can be useful at making direct comparisons between responsivit...
1 CitationsSource
May 1, 2018 in IMTC (Instrumentation and Measurement Technology Conference)
#1Linli Xie (UVA: University of Virginia)H-Index: 4
#2Christopher M. Moore (UVA: University of Virginia)H-Index: 8
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 9 authors...
The design and fabrication process for implementing a proof-of-concept on-wafer probe with integrated diode temperature sensor is reported. The sensor consists of a wafer probe fabricated from high-resistivity silicon using micromachining techniques. The temperature sensing element is a GaAs Schottky diode that is integrated with the probe through an epitaxy transfer process that utilizes SU-8 as a bonding agent. Design of the probe as well as fabrication and measurement of prototype diodes for ...
1 CitationsSource
#1Linli Xie (UVA: University of Virginia)H-Index: 4
#2Souheil Nadri (UVA: University of Virginia)H-Index: 3
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 8 authors...
This letter describes a new approach for fabricating quasi-vertical submillimeter-wave GaAs Schottky diodes heterogeneously integrated to high-resistivity silicon substrates. The new method is robust and eliminates previous processing steps that were prone to result in wafer fracture and delamination. Diodes fabricated with the new process and measured in the 325–500 GHz range using on-wafer RF probes exhibits low parasitic capacitance and series resistance, achieving device characteristics comp...
6 CitationsSource
#1N. Scott Barker (UVA: University of Virginia)H-Index: 11
#2Matthew F. BauwensH-Index: 7
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 4 authors...
This paper presents a comprehensive overview of the development and utilization of a micromachined silicon-on-insulator (SOI) fabrication process that has enabled the development of terahertz (THz) frequency superconducting-insulator-superconducting (SIS) and hot-electron bolometer (HEB) mixers, broadband directional couplers, on-wafer probes, as well as several multipliers. Through the detailed presentation of these circuits, it is demonstrated that ultrathin silicon is able to provide the requ...
3 CitationsSource
Jun 1, 2017 in IMS (International Microwave Symposium)
#1Chunhu Zhang (UVA: University of Virginia)H-Index: 7
#2Matthew F. BauwensH-Index: 7
Last.Arthur W. Lichtenberger (UVA: University of Virginia)H-Index: 7
view all 7 authors...
This paper describes the first-reported development of a micromachined differential probe for direct on-wafer measurements operating in the WM-1295 (140–220 GHz) frequency band. Design and fabrication of the probe, which includes integrated circuitry for converting the input of a single-ended vector network analyzer to differential mode, are described and an on-wafer calibration procedure for extracting the probe mixed-mode scattering parameters. is detailed.
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#1Robert M. WeikleH-Index: 23
#2Huilin LiH-Index: 4
Last.Arthur W. LichtenbergerH-Index: 16
view all 9 authors...
The continued emergence of new terahertz devices has created a need for improved approaches to packaging, integration, and measurement tools for diagnostics and characterization in this portion of the spectrum. Rectangular waveguide has for many years been the primary transmission medium for terahertz and submillimeter-wave systems operating from 300 GHz to 1 THz, with the UG-387 flange the most common interface for mating waveguide components over this frequency range. Alignment of UG-387 flang...
1 CitationsSource
May 1, 2016 in IMS (International Microwave Symposium)
#1David R. DaughtonH-Index: 1
#2Matthew F. BauwensH-Index: 7
Last.Scott YanoH-Index: 1
view all 14 authors...
We demonstrate 2-port, on-wafer S-parameter characterization at WR-5.1 frequencies and cryogenic temperatures. CAD-based simulation optimized the thermal pathways for the probe station, waveguide and probe assembly.
1 CitationsSource
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